Kim I‐g | Memory R&d Division Hynix Semiconductor Inc.
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概要
Memory R&d Division Hynix Semiconductor Inc. | 論文
- Suppressed Boron Penetration in p^+ poly-Si/Al_2O_3/Si Metal-Oxide-Semiconductor System by Remote Plasma Nitridation of Al_2O_3 Surface
- Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Physical and Electrical Characteristics of Poly-Si/ZrO_2/SiO_2/Si MOS Structures
- Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
- Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures