SAITO Mina | Komatsu Electronic Metals Co., Ltd.
スポンサーリンク
概要
関連著者
-
Jablonski Jaroslaw
Komatsu Electronic Metals Co. Ltd.
-
SAITO Mina
Komatsu Electronic Metals Co., Ltd.
-
Saito Mina
Komatsu Electronic Metals Co. Ltd.
-
Saito M
Tanaka Kikinzoku Kogyo Kk Kanagawa Jpn
-
MIYAMURA Yoshiji
Komatsu Electronic Metals Co., Ltd.
-
IMAI Masato
Komatsu Electronic Metals Co., Ltd.
-
Jablonski Jaroslaw
Komatsu Electronic Metals Co. Ltd. Hiratsuka Jpn
-
Imai Masato
Komatsu Electronic Metals Co. Ltd.
-
Miyamura Yoshiji
Komatsu Electronic Metals Co. Ltd.
-
TAJIMA Michio
Institute of Space and Astronautical Science/JAXA
-
NAGASAKA Keigo
Department of Physics,Faculty of Science,Science University of Tokyo
-
Tajima M
Inst. Space And Astronautical Sci. Sagamihara Jpn
-
Tajima Michio
Optoelectronics Joint Research Laboratory
-
Tajima Michio
Institute Of Space And Astronautical Scienc
-
Nagasaka K
Sci. Univ. Tokyo Tokyo
-
Nagasaka K
Department Of Physics Science University Of Tokyo
-
Nagasaka Keigo
Department Of Material Physics Faculty Of Engineering Science Osaka University
-
IBUKA Shigeo
Institute of Space and Astronautical Science
-
WARASHINA Masatoshi
Institute of Space and Astronautical Science
-
Nagasaka Keigo
Depanment Of Physics Faculty Of Science Science University Of Tokyo
-
KATAYAMA Tatsuhiko
Komatsu Electronic Metals Co., Ltd.
-
IKEGAYA Kazuyoshi
Komatsu Electronic Metals Co., Ltd.
-
Ibuka S
Inst. Space And Astronautical Sci. Sagamihara Jpn
-
Warashina M
Institute Of Space And Astronautical Science
-
Warashina Masatoshi
Institute Of Space And Aeronautical Science University Of Tokyo
-
Katayama Tatsuhiko
Komatsu Electronic Metals Co. Ltd.
-
Tajima Michio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo:(present Address) El
-
JABLONSKI Jaroslaw
Komatsu Electronic Metals Co., Ltd.
著作論文
- Photoluminescence Due to Degenerate Electron-Hole System in Silicon-on-Insulator Wafers under Ultraviolet Light Excitation
- Oxygen Concentration in the Top Silicon Layer of Silicon-on-Insulator Materials Formed by Low-Dose Implantation of Oxygen
- Effect of Fe Impurities on the Generation of Process-Induced Microdefects in Czochralski Silicon Crystals