Kim K | Technology Development Team Memory Device Business Samsung Electronics Co.
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- Technology Development Team Memory Device Business Samsung Electronics Co.の論文著者
Technology Development Team Memory Device Business Samsung Electronics Co. | 論文
- Reduction of Random Noise for CMOS Image Sensors with 2.2μm×2.2μm Pixel
- Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory
- High Density FRAM Technology
- Integration and Electrical Properties of Novel Ferroelectric Capacitors for 0.25μm 1 Transistor 1 Capacitor Ferroelectric Random Access Memory (1T1C FRAM)
- Novel Capacitor Technology for Sub-Quarter Micron 1T1C FRAM