Li Ning | Tokyo Inst. Of Technol. Tokyo Jpn
スポンサーリンク
概要
関連著者
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Li Ning
Tokyo Inst. Of Technol. Tokyo Jpn
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Okada Kenichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Matsuzawa Akira
Dep. Of Physical Electronics Tokyo Inst. Of Technol.
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Li Ning
Department Of Analytical Chemistry Shenyang Pharmaceutical University
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Okada Kenichi
Department Of Communications And Computer Engineering Kyoto University
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Matsuzawa Akira
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Technology
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MATSUZAWA Akira
Department of Physical Electronics, Tokyo Institute of Technology
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LI Ning
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of T
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OKADA Kenichi
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of T
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Matsuzawa Akira
Department Of Physical Electronics Tokyo Institute Of Technology
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Takayama Naoki
Department Of Physical Electronics Tokyo Institute Of Technology
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Okada Kenichi
Dep. Of Physical Electronics Tokyo Inst. Of Technol.
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Ito Shogo
Department Of Physical Electronics Tokyo Institute Of Technology
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Matsushita Kota
Department Of Physical Electronics Tokyo Institute Of Technology
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BU Qinghong
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology
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Takayama Naoki
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Technology
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TAKAYAMA Naoki
Department of Physical Electronics, Tokyo Institute of Technology
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MATSUSHITA Kota
Department of Physical Electronics, Tokyo Institute of Technology
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ITO Shogo
Department of Physical Electronics, Tokyo Institute of Technology
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Suzuki Tetsutaro
Departments Of Surgery Kitasato University School Of Medicine
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Bunsen Keigo
Department Of Physical Electronics Tokyo Institute Of Technology
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Suzuki T
Departments Of Surgery Kitasato University School Of Medicine
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Hirose Tatsuya
Compound Semiconductor Devices Lab Fujitsu Laboratories Ltd.
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Suzuki Toshihide
Compound Semiconductor Devices Lab Fujitsu Laboratories Ltd.
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Hirose T
Fujitsu Ltd.
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Suzuki Takeshi
Laboratory Of Microbial Biochemistry Institute For Chemical Research Kyoto University
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Bu Qinghong
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Chaivipas Win
Tokyo Inst. Of Technol. Tokyo Jpn
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CHAIVIPAS Win
Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of T
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Sato M
Tokyo Inst. Technol. Tokyo
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Suzuki Toshihide
Compound Semiconductor Devices Lab, Fujitsu Laboratories Ltd.
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Hirose Tatsuya
Compound Semiconductor Devices Lab, Fujitsu Laboratories Ltd.
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BUNSEN Keigo
Department of Physical Electronics, Tokyo Institute of Technology
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Chaivipas Win
Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Tec
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Kawano Yoichi
Fujitsu Ltd.
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Okada Kenichi
The Department Of Communications And Computer Engineering Kyoto University
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Kawano Yoichi
Advanced Devices Lab. Fujitsu Laboratories Ltd.
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Matsushita Kota
The Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Technology
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SUZUKI Toshihide
Advanced Devices Lab., Fujitsu Laboratories Ltd.
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SATO Masaru
Advanced Devices Lab., Fujitsu Laboratories Ltd.
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HIROSE Tatsuya
Advanced Devices Lab., Fujitsu Laboratories Ltd.
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LI Ning
the Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology
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BU Qinghong
the Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology
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TAKAYAMA Naoki
the Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology
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ITO Shogo
the Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology
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MATSUZAWA Akira
the Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology
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Ito Shogo
The Department Of Physical Electronics Graduate School Of Science And Engineering Tokyo Institute Of Technology
著作論文
- A Multi-Stage 60GHz CMOS LNA Using Dual Noise-Matching Technique
- A De-Embedding Method Using Different-Length Transmission Lines for mm-Wave CMOS Device Modeling
- Evaluation of a Multi-Line De-Embedding Technique up to 110GHz for Millimeter-Wave CMOS Circuit Design
- Analysis of CMOS Transconductance Amplifiers for Sampling Mixers
- Topology and Design Considerations of 60 GHz CMOS LNAs for Noise Performance Improving
- A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors
- Evaluation of L-2L De-Embedding Method Considering Misalignment of Contact Position for Millimeter-Wave CMOS Circuit Design