Kondo Naoto | NTT Musashino Electrical Communication Laboratory
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概要
NTT Musashino Electrical Communication Laboratory | 論文
- Gallium and Hydrogen Ion Irradiation during GaAs Molecular Beam Epitaxy
- Se Doping Mechanisms in MOCVD GaAs Layers
- Flow-Rate Modulation Epitaxy of GaAs
- Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs