Gallium and Hydrogen Ion Irradiation during GaAs Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-05-20
著者
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Kondo Naoto
Ntt Musashino Electrical Communication Laboratory:(present Address) Ntt Atsugi Electrical Communicat
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Sugiura Hideo
Ntt Musashino Electrical Communication Laboratory
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KAWASHIMA Minoru
NTT Musashino Electrical Communication Laboratory
関連論文
- Gallium and Hydrogen Ion Irradiation during GaAs Molecular Beam Epitaxy
- Se Doping Mechanisms in MOCVD GaAs Layers