Se Doping Mechanisms in MOCVD GaAs Layers

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概要

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• A model of the Se incorporation mechanism into MOCVD GaAs layers is discussed in terms of the competitive surface adsorption process between Se and As atoms. According to the model, the doping level is determined by [H_2Se]/[AsH_3] but is independent of [TMG]. The validity of the model is experimentally confirmed from the dependence of the doping level on H_2Se, AsH_3, and TMG concentrations. In addition, the model explains why Se dopant atoms are not accumulated at the interface when growth is suspended.

• 社団法人応用物理学会の論文
• 1985-10-20

著者

• Sugiura Hideo

  Ntt Musashino Electrical Communication Laboratory

• Asai Hiromatsu

  NTT Musashino Electrical Communication Laboratory

関連論文

• Gallium and Hydrogen Ion Irradiation during GaAs Molecular Beam Epitaxy
• Se Doping Mechanisms in MOCVD GaAs Layers

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