Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs

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概要

• 論文の詳細を見る

• Trimethyl and triethyl organometallic source materials were compared through the investigation on the optical and electrical properties of undoped GaAs and AlGaAs layers grown from these materials. Our experimental results indicate that the carbon contamination in the grown GaAs and AlGaAs is greatly reduced when triethyl organometallic compounds are used insteads of trimethyl organometallic compounds.

• 社団法人応用物理学会の論文
• 1985-10-20

著者

• Makimoto Toshiki

  Ntt Musashino Electrical Communication Laboratory

• Kobayashi Naoki

  NTT Musashino Electrical Communication Laboratory

関連論文

• Flow-Rate Modulation Epitaxy of GaAs
• Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs

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