Morifuji Masato | Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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- 同名の論文著者
- Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japanの論文著者
Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japan | 論文
- Studies of Boron Segregation to {311} Defects in Silicon-Implanted Silicon
- Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si
- Boron Accumulation in the {311} Defect Region Induced by Self-Implantation into Silicon Substrate
- Impact Excitation of Carriers in Diamond under Extremely High Electric Fields
- Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability