Ho I-Hsiu | Room 414, Department of Electrical Engineering, National Taiwan University

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Room 414, Department of Electrical Engineering, National Taiwan University | 論文

• Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes
• Application of Irradiation-Then-Anneal Treatment on the Improvement of Oxide Properties in Metal-Oxide-Semiconductor Capacitors
• Dependence of Hot-Carrier and Radiation Hardnesses of Metal-Oxide-Semiconductor Capacitors on Initial Oxide Resistance Determined by Charge-Then-Decay Method

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