KIM Hoe | Korea Photonics Technology Institute (KOPTI)
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概要
Korea Photonics Technology Institute (KOPTI) | 論文
- High Quality Crack-Free GaN-Based Epitaxy on Patterned Si(111) Substrate
- Structural Optimization of High-Power AlGaInP Resonant Cavity Light-Emitting Diodes for Visible Light Communications
- Negative-Voltage Electrostatic Discharge Characteristics of Blue Light-Emitting Diodes Using an Extended n-Electrode onto Plasma Treated p-GaN
- Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Volcano-Shaped Patterned Sapphire Substrates
- Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate