スポンサーリンク
Korea Photonics Technology Institute (KOPTI) | 論文
- High Quality Crack-Free GaN-Based Epitaxy on Patterned Si(111) Substrate
- Structural Optimization of High-Power AlGaInP Resonant Cavity Light-Emitting Diodes for Visible Light Communications
- Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Volcano-Shaped Patterned Sapphire Substrates
- Negative-Voltage Electrostatic Discharge Characteristics of Blue Light-Emitting Diodes Using an Extended n-Electrode onto Plasma Treated p-GaN
- Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate