Tatsumi Toru | System Devices Research Laboratories, NEC Corp.
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概要
System Devices Research Laboratories, NEC Corp. | 論文
- 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs
- Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure
- High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
- Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications
- High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics