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System Devices Research Laboratories, NEC Corp. | 論文

• 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs
• High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
• Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications
• High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
• Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application
• Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure

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