NISHIGUCHI H. | High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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High Frequency & Optical Device Works, Mitsubishi Electric Corporation | 論文
- Direct Measurement of the Maximum Operating Region in AlGaAs HBTs for RF Power Amplifiers(Special Issue on Microwave and Millimeter Wave Technology)
- High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones (Special Issue on Microwave and Millimeterwave High-power Devices)
- A GSM/EDGE Dual-Mode, Triple-Band InGaP HBT MMIC Power Amplifier Module(Microwaves, Millimeter-Waves)
- Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy
- Four-Channel Integrated Receiver with a Built-In Spatial Demultiplexer Optics for 100Gb/s Ethernet