Yamada Akira | Department of Physical Electronics, Tokyo Institute of Technology O-okayama
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Department of Physical Electronics, Tokyo Institute of Technology O-okayama | 論文
- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
- Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition
- Heavily P-Doped (>10^ cm) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250℃
- Photochemical Vapor Deposition of Si/Si_Ge_x Strained Layer Superlattices at 250℃ : Silicon Heterostructures(Solid State Devices and Materials 1)
- Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with SiH_2Cl_2