LIU Pin-Hui | TRW Electronics and Technology Division
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概要
TRW Electronics and Technology Division | 論文
- Enhancement-Mode InGaAS/InAlAs/InP High Electon Mobility Transistor with 0.1 μm Gate
- High Reliability of 0.1 μm InGaAs/InAlAs/InP High Electron Mobility Transistors Microwave Monolithic Integrated Circuit on 3-inch InP Substrates
- Normal-Super-Normal Junction Fabricated in a Split-Gate Wire ( Quantum Dot Structures)
- Fabrication of a Split-Gate quantum Wire Having a Ferromagnetic Dot
- Fabrication of Buried Metal Dot Structure in Split-Gate Wire