MUKAIYAMA Takashi | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
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概要
Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation | 論文
- Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
- Dislocation propagation in GaN films formed by epitaxial lateral overgrowth
- Optical Recombination Processes in High-Quality GaN Films and InGaN Quantum Wells Grown on Facet-Initiated Epitaxial Lateral Overgrown GaN Substrates
- Optical Recombination Processes in High Quality GaN Films and InGaN Quantum Wells Grown on FIELO-GaN Substrates
- 0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs (Special Issue on Ultra-High-Speed IC and LSI Technology)