Soh Hoe-Sub | Advanced Technology Development Team

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Advanced Technology Development Team | 論文

• Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
• Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET
• RC-FinFET (Recessed Channel FinFET) Cell Transistor Technology for Future Generation DRAMs
• Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Oxide for Deep-Submicron CMOS Technologies
• Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Oxide for Deep-Submicron CMOS Technologies

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