Fang Yean | VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kuang University
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概要
- 同名の論文著者
- VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kuang Universityの論文著者
VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kuang University | 論文
- A Comparison of Behaviors between Hydrogenated/Unhydrogenated Polysilicon Thin Film Transistors under Electric Stress
- Epitaxial Growth and Electrical Characteristics of β-SiC on Si by Low-Pressure Rapid Thermal Chemical Vapor Deposition
- Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide
- Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric
- Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric