Ogasawara Munehiro | Advanced LSI Laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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概要
- 同名の論文著者
- Advanced LSI Laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japanの論文著者
Advanced LSI Laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan | 論文
- Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
- Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
- Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric Si_xN MOSFET
- Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
- Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots