Nakajima Osaake | NTT Atsugi Electrical Communication Laboratories
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概要
NTT Atsugi Electrical Communication Laboratories | 論文
- Dislocation Propagation into MBE Grown GaAs Layers under the Condition of Misfit Dislocation Generation
- Misfit Dislocation Generation for MBE Grown GaAs on In-Doped LEC-GaAs Substrates
- Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAs
- Electrical Properties of Oval Defects in GaAs Grown by MBE
- Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices