Matsuzawa Kazuya | Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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- 同名の論文著者
- Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japanの論文著者
Advanced LSI Technology Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan | 論文
- Schottky-Barrier Metal–Oxide–Semiconductor Field-Effect Transistors as Resonant Tunneling Devices
- Hall Factor in Ultrathin-Body Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices
- Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
- Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing