Shimokawa Ryuichi | National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
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- 同名の論文著者
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japanの論文著者
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Formation of $\beta$-FeSi2 Microstructures by Reactive Ion Etching Using SF6 Gas