スポンサーリンク
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Formation of $\beta$-FeSi2 Microstructures by Reactive Ion Etching Using SF6 Gas
- Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors