Sumida Takashi | Department of Precision Engineering, Faculty of Engineering, Osaka University
スポンサーリンク
概要
Department of Precision Engineering, Faculty of Engineering, Osaka University | 論文
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
- Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers