Hata Masayuki | Optoelectronics Technology Research Laboratory
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概要
Optoelectronics Technology Research Laboratory | 論文
- Growth and Characterization of GaAs/GaSe/Si Heterostructures
- GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
- Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
- Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy
- In Situ Observations of GaAs Initial Growth on Si Substrates Studied Using an Ultrahigh-Vacuum Transmission-Electron Microscope/Molecular-Beam Epitaxy System