Murase Tomoki | Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
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- Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japanの論文著者
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan | 論文
- Effect of Oxygen Impurity on the Production of Room-Temperature Stable Metastable Defects in n-Type Silicon Implanted with Hydrogen Ions at 88 K
- Production of Metastable Defects in n-Type Silicon by Hydrogen Implantation at 88 K