スポンサーリンク
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan | 論文
- Effect of Oxygen Impurity on the Production of Room-Temperature Stable Metastable Defects in n-Type Silicon Implanted with Hydrogen Ions at 88 K
- Production of Metastable Defects in n-Type Silicon by Hydrogen Implantation at 88 K