Kim J. | Seoul Branch, Korea Basic Science Institute
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概要
Seoul Branch, Korea Basic Science Institute | 論文
- Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
- Free Carrier Concentration Gradient along the c-Axis of a Freestanding Si-doped GaN Single Crystal
- Free Carrier Concentration Gradient along the $c$-Axis of a Freestanding Si-doped GaN Single Crystal
- Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers