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JOO Heung-Jin | 論文著者
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Joo Heung-Jin
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Joo Heung-jin
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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JOO Heung-Jin
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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Joo Heung-Jin
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
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Joo Heung-Jin
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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Joo Heung-Jin
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Joo Heung-jin
Atd Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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JOO Heung-Jin
ATD Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Joo Heung-Jin
ATD Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea