Joo Heung-Jin | Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea

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• Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Koreaの論文著者

Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea | 論文

• Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device

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