Ichikawa Masakazu | 論文著者

Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c

Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT–ATP), 1–1–4 Higashi, Tsukuba, Ibaraki 305, Japan

Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT–ATP), c/o National Institute for Advanced Interdisciplinary Research (NAIR), 1–1–4 Higashi, Tsukuba, Ibaraki 305, Japan

Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT–ATP), c/o National Institute for Advanced Interdisciplinary Research (NAIR), 1–1–4 Higashi, Tsukuba, Ibaraki 305–0046, Japan

Joint Research Center for Atom Technology, Angstrom Technology Partnership, 1-1-4 Higashi, Tsukuba, Ibaraki 305-0046, Japan

Joint Research Center for Atom Technology, National Institute of Advanced Industrial Science and Technology (JRCAT-AIST)

Joint Research Center for Atom Technology, National Institute of Advanced Industrial Science and Technology (JRCAT-AIST), AIST Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan

Joint Research Center for Atom Technology, National Institute of Advanced Industrial Science and Technology (JRCAT-AIST):Department of Applied Physics, The University of Tokyo

Mirai Project Advanced Semiconductor Research Center (asrc)

MIRAI Project, Advanced Semiconductor Research Center (ASRC)

MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST)

MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 4, Tsukuba, Ibaraki 305-8562, Japan

NEC Fundamental Research Laboratories

O National Institute For Advanced Interdisciplinary Research (nair)

Sii Nanotechnology Inc.