Highly Stable Etch Stopper Technology for 0.25μm 1 Transistor 1 Capacitor (1T1C) 32 Mega-Bit Ferroelectric Random Access Memory (FRAM)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Lee Kyu-mann
Atd Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Kim Kinam
Atd Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Joo Suk-ho
Atd Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Lee Sang-woo
Atd Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Park J‐h
Atd Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Joo Heung-jin
Atd Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Jang Nak-won
Atd Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Song Yoon-jong
Atd Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Kim Hyun-ho
Atd Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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PARK Jung-Hoon
ATD Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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LEE Sung-Yung
ATD Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Park Jung-hoon
Atd Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Lee Sung-Yung
ATD Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
関連論文
- Highly Stable Etch Stopper Technology for 0.25μm 1 Transistor 1 Capacitor (1T1C) 32 Mega-Bit Ferroelectric Random Access Memory (FRAM)
- Highly Stable Etch Stopper Technology for 0.25 μm 1 Transistor 1 Capacitor (1T1C) 32 Mega-Bit Ferroelectric Random Access Memory (FRAM)