Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-04-01
著者
-
Zhu Ting
The University Of Texas At Austin Microelectronics Research Center
-
Choi Jin
The University Of Texas At Austin Microelectronics Research Center
-
Wong Michael
The University Of Texas At Austin Microelectronics Research Center
-
Dupuis Russell
The University Of Texas At Austin Microelectronics Research Center
-
Becher David
The University Of Illinois At Urbana-champaign Center For Compound Semiconductor Microelectronics
-
CHOWDHURY Uttiya
The University of Texas at Austin, Microelectronics Research Center
-
SICAULT Delphine
The University of Texas at Austin, Microelectronics Research Center
-
DENYSZYN Jonathan
The University of Texas at Austin, Microelectronics Research Center
-
FENG Milton
The University of Illinois at Urbana-Champaign, Center for Compound Semiconductor Microelectronics
-
Feng Milton
The University Of Illinois At Urbana-champaign Center For Compound Semiconductor Microelectronics
-
Chowdhury Uttiya
The University Of Texas At Austin Microelectronics Research Center
-
Sicault Delphine
The University Of Texas At Austin Microelectronics Research Center
-
Denyszyn Jonathan
The University Of Texas At Austin Microelectronics Research Center
関連論文
- Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier
- Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier