Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier
スポンサーリンク
概要
- 論文の詳細を見る
The improved performance of AlGaN/GaN heterojunction field-effect transistors using a delta-doping approach along with an AlN binary barrier is reported. Low-pressure metalorganic chemical vapor deposition was used to grow the epitaxial heterostructures on semi-insulating SiC substrates. The maximum carrier mobility of $\mu=1,066$ cm2/V-s and sheet carrier density of $n_{\text{s}}\sim 2.30\times 10^{13}$ cm-2 yields a large $n_{\text{s}}\mu$ product of $2.45\times 10^{16}$ V-s. Devices with 0.15 μm gate lengths exhibited a maximum current density of $I_{\text{DSmax}}=1.82$ A/mm (at $V_{\text{G}}=+1$ V) and a peak transconductance of $g_{\text{m}}=331$ mS/mm. Furthermore, $f_{\text{T}}\sim 55$ GHz and $f_{\text{max}}\sim 115$ GHz were measured.
- 2003-04-01
著者
-
Zhu Ting
The University Of Texas At Austin Microelectronics Research Center
-
Choi Jin
The University Of Texas At Austin Microelectronics Research Center
-
Wong Michael
The University Of Texas At Austin Microelectronics Research Center
-
Dupuis Russell
The University Of Texas At Austin Microelectronics Research Center
-
Becher David
The University Of Illinois At Urbana-champaign Center For Compound Semiconductor Microelectronics
-
Feng Milton
The University Of Illinois At Urbana-champaign Center For Compound Semiconductor Microelectronics
-
Chowdhury Uttiya
The University Of Texas At Austin Microelectronics Research Center
-
Sicault Delphine
The University Of Texas At Austin Microelectronics Research Center
-
Denyszyn Jonathan
The University Of Texas At Austin Microelectronics Research Center
-
Wong Michael
The University of Texas at Austin, Microelectronics Research Center, 10100 Burnet Road, Austin, Texas 78758, U.S.A.
-
Sicault Delphine
The University of Texas at Austin, Microelectronics Research Center, 10100 Burnet Road, Austin, Texas 78758, U.S.A.
-
Dupuis Russell
The University of Texas at Austin, Microelectronics Research Center, 10100 Burnet Road, Austin, Texas 78758, U.S.A.
-
Zhu Ting
The University of Texas at Austin, Microelectronics Research Center, 10100 Burnet Road, Austin, Texas 78758, U.S.A.
-
Choi Jin
The University of Texas at Austin, Microelectronics Research Center, 10100 Burnet Road, Austin, Texas 78758, U.S.A.
-
Becher David
The University of Illinois at Urbana-Champaign, Center for Compound Semiconductor Microelectronics, 208 North Wright Street, Urbana, Illinois 61801, U.S.A.
-
Chowdhury Uttiya
The University of Texas at Austin, Microelectronics Research Center, 10100 Burnet Road, Austin, Texas 78758, U.S.A.
-
Denyszyn Jonathan
The University of Texas at Austin, Microelectronics Research Center, 10100 Burnet Road, Austin, Texas 78758, U.S.A.
関連論文
- Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier
- Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier