High Electrical Activation of Implanted Phosphorus in the Fully Amorphized Implant-Layer by Solid-Phase Epitaxy on (1120)-Oriented 6H-SiC
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-01-15
著者
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Tanabe Hitoshi
College Of Engineering And Research Center Of Ion Beam Technology Hosei University
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NAKAMURA Tomonori
College of Engineering and Research Center of Ion Beam Technology, Hosei University
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SATOH Masataka
College of Engineering and Research Center of Ion Beam Technology, Hosei University
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Satoh Masataka
College Of Engineering And Research Center Of Ion Beam Technology Hosei University
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Nakamura Tomonori
College Of Engineering And Research Center Of Ion Beam Technology Hosei University