Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors (Special Issue : Recent Advances in Nitride Semiconductors)

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概要

• 論文の詳細を見る
• The Japan Society of Applied Physicsの論文

著者

• Ao Jin-Ping

  The University of Tokushima, Tokushima 770-8506, Japan

• Ohno Yasuo

  The University of Tokushima, Tokushima 770-8506, Japan

• Kio Yusuke

  The University of Tokushima, Tokushima 770-8506, Japan

• Ikawa Yusuke

  The University of Tokushima, Tokushima 770-8506, Japan

関連論文

• Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors
• Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors (Special Issue : Recent Advances in Nitride Semiconductors)

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