Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors

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概要

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• The side-gating effect was demonstrated in AlGaN/GaN heterostructure field effect transistors (HFETs) for the first time. Using 10-μm-thick i-GaN buffer layers, drain currents decreased significantly with the application of a negative bias on a side gate 8 μm away from the FET. The transient responses with LED illumination demonstrated half-recovery condition that can be interpreted as a negative-charge redistribution through a hole emission from traps. The application of a positive side-gate bias confirmed the half-recovery mechanism. From the temperature variation measurements, the trap energy level is estimated to be 0.76 eV from the valence band with a hole capture cross section of approximately 4\times 10^{-16} cm². All these results indicate that the side-gating effect is caused by hole traps in the i-GaN layer, which is in accord with the Shockley--Read--Hall model of deep traps.

• 2013-08-25

著者

• Ao Jin-Ping

  The University of Tokushima, Tokushima 770-8506, Japan

• Ohno Yasuo

  The University of Tokushima, Tokushima 770-8506, Japan

• Kio Yusuke

  The University of Tokushima, Tokushima 770-8506, Japan

• Ikawa Yusuke

  The University of Tokushima, Tokushima 770-8506, Japan

関連論文

• Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors
• Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors (Special Issue : Recent Advances in Nitride Semiconductors)

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