Temperature and Light Intensity Dependence of Photocurrent Transport Mechanisms in InGaN p-i-n Homojunction Solar Cells (Special Issue : Recent Advances in Nitride Semiconductors)
スポンサーリンク
概要
著者
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Koide Yasuo
Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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Sumiya Masatomo
Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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Sang Liwen
International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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Liao Meiyong
Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
関連論文
- Temperature and Light Intensity Dependence of Photocurrent Transport Mechanisms in InGaN p--i--n Homojunction Solar Cells
- Temperature and Light Intensity Dependence of Photocurrent Transport Mechanisms in InGaN p-i-n Homojunction Solar Cells (Special Issue : Recent Advances in Nitride Semiconductors)