Temperature and Light Intensity Dependence of Photocurrent Transport Mechanisms in InGaN p--i--n Homojunction Solar Cells

概要

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The photovoltaic (PV) properties of the InGaN p--i--n homojunction solar cell are investigated at different temperatures and light intensities. With increasing temperature, the dark current--voltage (I--V) behaviors display a large variation especially at the forward voltage near the open-circuit voltage (V_{\text{oc}}) region, which leads to a great degradation of the V_{\text{oc}} at high temperatures. The short-circuit current density (J_{\text{sc}}) first increases and then decreases as temperature increases. The photocurrent transport mechanisms at different temperatures and light intensities are analyzed by fitting the I--V curves using different carriers transport models. The traps inside the p--i--n junction especially in the p-type region tend to be activated at elevated temperatures above 338 K, which increase the recombination and reduce J_{\text{sc}}. The conversion efficiencies of the solar cell are mainly affected by V_{\text{oc}}, which degrades rapidly with elevated temperatures.
2013-08-25