Evaluation of Stacking Faults in Single-Crystalline 3C-SiC Films by Polarized Raman Spectroscopy (Crystal growth, surfaces, interfaces, thin films, and bulk materials)

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概要

• 論文の詳細を見る

著者

• Abe Yoshihisa

  Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

• Uchimaru Tomonori

  Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

• Ohmori Noriko

  Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

• Komiyama Jun

  Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

関連論文

• Determination of Aluminium Mole Fraction in AlGaN Layers of GaN-Capped AlGaN/GaN Heteroepitaxial Wafers by Ultraviolet Reflection
• Evaluation of Stacking Faults in Single-Crystalline 3C-SiC Films by Polarized Raman Spectroscopy
• Evaluation of Stacking Faults in Single-Crystalline 3C-SiC Films by Polarized Raman Spectroscopy (Crystal growth, surfaces, interfaces, thin films, and bulk materials)

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