Determination of Aluminium Mole Fraction in AlGaN Layers of GaN-Capped AlGaN/GaN Heteroepitaxial Wafers by Ultraviolet Reflection

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概要

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• Ultraviolet reflection spectroscopy is applicable to the determination of the aluminium mole fraction of GaN-capped AlGaN/GaN heteroepitaxial wafers on silicon, while conventional photoluminescence is inapplicable. AlGaN peaks in the ultraviolet reflection spectra are clearly observed regardless of the cap, but the AlGaN photoluminescence peaks of the samples with a 2-nm-thick cap are difficult to observe clearly. For some capped samples, the quantum-well emission due to the cap is observed near the AlGaN peak.

• 2013-04-25

著者

• Komiyama Jun

  Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

• Shirai Hiroshi

  Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

• Yanase Yoshihata

  Covalent Materials Corporation, Hadano, Kanagawa 257-8566, Japan

関連論文

• Determination of Aluminium Mole Fraction in AlGaN Layers of GaN-Capped AlGaN/GaN Heteroepitaxial Wafers by Ultraviolet Reflection
• Evaluation of Stacking Faults in Single-Crystalline 3C-SiC Films by Polarized Raman Spectroscopy
• Evaluation of Stacking Faults in Single-Crystalline 3C-SiC Films by Polarized Raman Spectroscopy (Crystal growth, surfaces, interfaces, thin films, and bulk materials)

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