Low Power and Improved Switching Properties of Selector-Less Ta₂O₅ Based Resistive Random Access Memory Using Ti-Rich TiN Electrode (Special Issue : Solid State Devices and Materials)
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概要
- 論文の詳細を見る
- 2013-04-00
著者
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Joo Moonsig
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Hong Kwon
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Jung Kyooho
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Park Sungki
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Lee Keejeung
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Kim Hyojune
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Park Wooyoung
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Kim Beomyong
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Seo Bomin
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Kim Wangee
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
関連論文
- Low Power and Improved Switching Properties of Selector-Less Ta
- Low Power and Improved Switching Properties of Selector-Less Ta₂O₅ Based Resistive Random Access Memory Using Ti-Rich TiN Electrode (Special Issue : Solid State Devices and Materials)