Low Power and Improved Switching Properties of Selector-Less Ta
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概要
- 論文の詳細を見る
The effects of TiN top electrode composition (TiN vs Ti-rich TiN) on the resistive switching characteristics of selector-less TiN/TiO<inf>x</inf>/Ta<inf>2</inf>O<inf>5</inf>/TiN resistive random access memory (ReRAM) are investigated. Ti-rich TiN enables TiO<inf>x</inf>to have a higher concentration of oxygen vacancy and reduce barrier height between top electrode and TiO<inf>x</inf>. This leads to higher on/off current ratio and lower operation voltage without degradation of non-linearity which is the important factor for selector-less type ReRAM, compared to the stoichiometric TiN resistor stack. Consequently, it is verified that the switching mechanism is hybrid combination of filament formation and redox reaction in switching operation. This work is applicable to both high density and cost-effective ReRAM.
- 2013-04-25
著者
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Joo Moonsig
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Kim Beomyong
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Kim Wangee
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Kim Hyojune
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Jung Kyooho
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Park Wooyoung
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Seo Bomin
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Lee Keejeung
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Hong Kwon
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Park Sungki
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Hong Kwon
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Jung Kyooho
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Park Sungki
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Lee Keejeung
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Kim Hyojune
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Park Wooyoung
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Kim Beomyong
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Seo Bomin
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Kim Wangee
NM Material Research Team, R&D Division, SK Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
関連論文
- Low Power and Improved Switching Properties of Selector-Less Ta
- Low Power and Improved Switching Properties of Selector-Less Ta₂O₅ Based Resistive Random Access Memory Using Ti-Rich TiN Electrode (Special Issue : Solid State Devices and Materials)