Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials)
スポンサーリンク
概要
著者
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MIURA-MATTAUSCH Mitiko
Advanced Science of Matter, Hiroshima University
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Mattausch Hans
Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Zhou Xingye
Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Inoue Takuya
Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Kitamura Masashi
Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Matsuura Kai
Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyake Masataka
Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Iizuka Takahiro
Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Umeda Takuya
Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Kikuchihara Hideyuki
Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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He Jin
SoC Key Laboratory, Peking University, Shenzhen 518057, P. R. China
関連論文
- A Bulk-Current Model for Advanced MOSFET Technologies Without Binning : Substrate Current and Fowler-Nordheim Current
- A Gate-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2
- Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
- Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials)