Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors

概要

論文の詳細を見る
It is demonstrated that the self-heating effect easily causes elevated thermal equilibrium condition within the active device for thin substrate MOSFETs. This leads to a non-linearity of the thermal resistance, which originally is a material specific constant. A compact model for describing the observed effective nonlinear thermal resistance has been developed which captures the device geometry effects as well as the bias condition dependences.
2013-04-25