Bismuth Nanowire Grown Naturally Using a Sputtering System
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概要
- 論文の詳細を見る
We report the growth of Bismuth (Bi) nanowires on glass substrates using a radio frequency (RF) sputtering system. The growth temperature and RF power were varied to study the growth mechanism of the nanowires. The scanning electron microscope (SEM)/transmission electron microscope (TEM) images of the samples under various growth conditions were taken to reveal the morphologies of the Bi nanowires and films. We found that the optimal conditions for growing Bi nanowires were 120--160 °C, 0.5 W/cm<sup>2</sup>(growth rate 40 Å/s), and 240 s.
- 2013-03-25
著者
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Wu Bin-Kun
Department of Physics, National Taiwan University, Taipei 10617, Taiwan
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Chern Ming-Yau
Department of Physics, National Taiwan University, Taipei 10617, Taiwan, R.O.C
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Lee Hsin-Yen
Department of Physics, National Taiwan University, Taipei 10617, Taiwan
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Chem Ming-Yau
Department of Physics, National Taiwan University, Taipei 10617, Taiwan, R.O.C
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- Bismuth Nanowire Grown Naturally Using a Sputtering System