Fabrication and Properties of Indium Tin Oxide/ZnO Schottky Photodiode with Hydrogen Peroxide Treatment

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概要

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• A transparent, efficient ZnO ultraviolet Schottky detector with indium tin oxide (ITO) as a metallic contact layer is fabricated on ITO-coated glass substrates by cw CO₂ laser evaporation. The device behavior changes from near ohmic to Schottky in the current--voltage characteristics after hydrogen peroxide treatment on the ZnO surface with a fitted barrier height of 1.16 eV, an ideality factor of 2.31, and a leakage current of $3.1\times 10^{-7}$ A at $-3$ V bias. Photoluminescence (PL) data show the effect of hydrogen peroxide, and indicate that the surface defects are removed, and better diode characteristics are shown.

• 2011-08-25

著者

• Chern Ming-yau

  Department Of Physics National Taiwan University

• Su Chun-tsung

  Department Of Physics National Taiwan University

• Wu Bin-Kun

  Department of Physics, National Taiwan University, Taipei 10617, Taiwan

• Lee Hsin-Yen

  Department of Physics, National Taiwan University, Taipei 10617, Taiwan

• Xu Wei-Lun

  Department of Physics, National Taiwan University, Taipei 10617, Taiwan

• Lin Yu-Jui

  Department of Physics, National Taiwan University, Taipei 10617, Taiwan

• WU Bin-Kun

  Department of Physics, National Taiwan University

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