Extraction Enhanced Lateral Insulated Gate Bipolar Transistor : A Super High Speed Lateral Insulated Gate Bipolar Transistor Superior to Lateral Double Diffused Metal Oxide Semiconductor Field-Effect Transistor (Special Issue : Solid State Devices and Mat

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概要

• 論文の詳細を見る

著者

• Takahashi Shigeki

  Semiconductor Process R&D Division, DENSO CORPORATION

• Ashida Youichi

  Semiconductor Process R&D Division, DENSO CORPORATION

• Shiraki Satoshi

  Semiconductor Process R&D Division, DENSO CORPORATION

• Tokura Norihito

  Semiconductor Process R&D Division, DENSO Co., Ltd., Kota, Aichi 444-0193, Japan

• Nakagawa Akio

  Nakagawa Consulting Office, Chigasaki, Kanagawa 253-0021, Japan

関連論文

• Extraction Enhanced Lateral Insulated Gate Bipolar Transistor : A Super High Speed Lateral Insulated Gate Bipolar Transistor Superior to Lateral Double Diffused Metal Oxide Semiconductor Field-Effect Transistor (Special Issue : Solid State Devices and Mat
• Conduction and Switching Loss Reduction of Lateral Power Diode on Silicon-on-Insulator Substrate with Trenched Buried Oxide Layer

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